onsemi Single SuperFET II 1 Type N-Channel MOSFET, 4.5 A, 600 V Enhancement, 3-Pin IPAK (TO-251) FCU900N60Z
- N° de stock RS:
- 864-4992
- Référence fabricant:
- FCU900N60Z
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 tube de 75 unités)*
76,575 €
(TVA exclue)
92,625 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En voie de retrait du marché
- 225 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 - 75 | 1,021 € | 76,58 € |
| 150 - 225 | 0,766 € | 57,45 € |
| 300 - 450 | 0,743 € | 55,73 € |
| 525 - 975 | 0,65 € | 48,75 € |
| 1050 + | 0,594 € | 44,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 864-4992
- Référence fabricant:
- FCU900N60Z
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SuperFET II | |
| Package Type | IPAK (TO-251) | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 52W | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.8mm | |
| Width | 2.5 mm | |
| Height | 6.3mm | |
| Number of Elements per Chip | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SuperFET II | ||
Package Type IPAK (TO-251) | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 52W | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 6.8mm | ||
Width 2.5 mm | ||
Height 6.3mm | ||
Number of Elements per Chip 1 | ||
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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