onsemi Single SuperFET II 1 N-Channel MOSFET, 4.5 A, 600 V Enhancement, 3-Pin IPAK (TO-251) FCU900N60Z

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N° de stock RS:
864-4992
Référence fabricant:
FCU900N60Z
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

600V

Package Type

IPAK (TO-251)

Series

SuperFET II

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

900mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-30V, +30V

Maximum Power Dissipation Pd

52W

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Height

6.3mm

Length

6.8mm

Width

2.5mm

Number of Elements per Chip

1

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.

Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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