onsemi SuperFET II Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

184,15 €

(TVA exclue)

222,80 €

(TVA incluse)

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Dernier stock RS
  • 50 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité
Prix par unité
le tube*
50 - 503,683 €184,15 €
100 +3,499 €174,95 €

*Prix donné à titre indicatif

N° de stock RS:
145-4425
Référence fabricant:
FCP104N60F
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

37A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

SuperFET II

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

104mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

357W

Typical Gate Charge Qg @ Vgs

110nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Height

15.215mm

Length

10.36mm

Automotive Standard

No

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.

Utilizing an Advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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