onsemi SuperFET II Type N-Channel MOSFET, 20.6 A, 600 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 145-5329
- Référence fabricant:
- FCP190N60E
- Fabricant:
- onsemi
Sous-total (1 tube de 50 unités)*
68,75 €
(TVA exclue)
83,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 1 200 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 1,375 € | 68,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 145-5329
- Référence fabricant:
- FCP190N60E
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20.6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | SuperFET II | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.19Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Gate Source Voltage Vgs | 30 V ac | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 9.4mm | |
| Width | 4.83 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20.6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series SuperFET II | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.19Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Gate Source Voltage Vgs 30 V ac | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 9.4mm | ||
Width 4.83 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor
Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an Advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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