Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin TO-220 IPP80N06S207AKSA1
- N° de stock RS:
- 857-6987
- Référence fabricant:
- IPP80N06S207AKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 500 unités)*
508,00 €
(TVA exclue)
614,50 €
(TVA incluse)
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le tube* |
|---|---|---|
| 500 - 2000 | 1,016 € | 508,00 € |
| 2500 - 4500 | 0,98 € | 490,00 € |
| 5000 + | 0,967 € | 483,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 857-6987
- Référence fabricant:
- IPP80N06S207AKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | TO-220 | |
| Series | OptiMOS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 86 nC @ 10 V | |
| Length | 10mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.4mm | |
| Height | 15.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type TO-220 | ||
Series OptiMOS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 86 nC @ 10 V | ||
Length 10mm | ||
Number of Elements per Chip 1 | ||
Width 4.4mm | ||
Height 15.65mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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