Infineon OptiMOS 5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 214-9082
- Référence fabricant:
- IPP052N08N5AKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 50 unités)*
86,40 €
(TVA exclue)
104,55 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,728 € | 86,40 € |
| 100 - 200 | 1,40 € | 70,00 € |
| 250 - 450 | 1,313 € | 65,65 € |
| 500 - 950 | 1,244 € | 62,20 € |
| 1000 + | 1,192 € | 59,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9082
- Référence fabricant:
- IPP052N08N5AKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | OptiMOS 5 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Height | 9.45mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series OptiMOS 5 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Height 9.45mm | ||
Automotive Standard No | ||
The Infineon range offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and Strong IRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs. These latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies.
Qualified according to JEDEC1 for target applications
100% avalanche tested
Liens connexes
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