Références fabricant

Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S2L11ATMA1

N° de stock RS:: 857-4524
Référence fabricant:: IPB80N06S2L11ATMA1
Fabricant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S2L11ATMA1

Offre groupée disponible

Sous-total (1 bobine de 1000 unités)*

697,00 €

(TVA exclue)

843,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles

Unité	Prix par unité	la bobine*
1000 - 1000	0,697 €	697,00 €
2000 - 4000	0,672 €	672,00 €
5000 +	0,664 €	664,00 €

*Prix donné à titre indicatif

N° de stock RS:: 857-4524
Référence fabricant:: IPB80N06S2L11ATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	55 V
	Package Type	D2PAK (TO-263)
	Series	OptiMOS
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	14.7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1.2V
	Maximum Power Dissipation	158 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	9.25mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	62 nC @ 10 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Length	10mm
	Minimum Operating Temperature	-55 °C
	Height	4.4mm

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 55 V
	Package Type D2PAK (TO-263)
	Series OptiMOS
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 14.7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1.2V
	Maximum Power Dissipation 158 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 9.25mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 62 nC @ 10 V
	Number of Elements per Chip 1
	Transistor Material Si
	Length 10mm
	Minimum Operating Temperature -55 °C
	Height 4.4mm

Statut RoHS : Exempté

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK IPB80N06S2L11ATMA1

Infineon OptiMOS™ Power MOSFET Family

Liens connexes