Infineon HEXFET Type P-Channel MOSFET, 70 A, 55 V Enhancement, 3-Pin TO-263 IRF4905STRLPBF

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12,29 €

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14,87 €

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5 +2,458 €12,29 €

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N° de stock RS:
831-2819
Référence fabricant:
IRF4905STRLPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

120nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.3V

Maximum Power Dissipation Pd

170W

Maximum Operating Temperature

150°C

Length

10.67mm

Width

9.65 mm

Height

4.83mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-44-444

Infineon HEXFET Series MOSFET, 70A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRF4905STRLPBF


This high current MOSFET is suitable for various applications within automation and electronics. With a maximum continuous drain current of 70A, it operates at drain-source voltages up to 55V. Its enhancement mode configuration meets performance requirements, while its low RDS(on) maximises energy efficiency. Designed for high power applications, this MOSFET offers thermal stability, making it appropriate for rigorous operating conditions.

Features & Benefits


• Improves system efficiency through low on-resistance values

• Functions effectively within a temperature range of -55°C to +150°C

• Supports fast switching speeds to enhance performance

• Features robust design for repetitive avalanche conditions

• Provided in a D2PAK TO-263 package for straightforward surface mounting

Applications


• Used in power management systems and converters

• Appropriate for motor control requiring high efficiency

• Integrated into switching power supplies for enhanced performance

• Applicable in automotive environments needing dependable control

• Employed in industrial automation requiring substantial power handling

What is the maximum temperature this device can operate at?


The device has a maximum operating temperature of +150°C, ensuring stability under varying environmental conditions.

How does the low RDS(on) benefit circuit design?


Low RDS(on) minimises conduction losses, enhancing overall circuit efficiency and enabling cooler operation.

Can this component handle pulsed currents?


Yes, it is capable of managing pulsed drain currents up to 280 A, making it suitable for dynamic applications.

What are the key parameters for selecting compatible driving voltages?


The gate-to-source voltage should remain within the range of -20 V to +20 V to guarantee effective operation without risk of damage.

Is it suitable for high-frequency switching applications?


The device is designed for fast switching, making it suitable for high-frequency operational functions in electronic circuits.

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