Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK IRLR120NTRPBF
- N° de stock RS:
- 830-3344
- Référence fabricant:
- IRLR120NTRPBF
- Fabricant:
- Infineon
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 830-3344
- Référence fabricant:
- IRLR120NTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 265 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Typical Gate Charge @ Vgs | 20 nC @ 5 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 265 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 20 nC @ 5 V | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Transistor Material Si | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
- Pays d'origine :
- CN
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252 IRLR120NTRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V TO-252
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK IRLR3110ZTRLPBF
- Infineon HEXFET N-Channel MOSFET 60 V, 3-Pin DPAK IRFS3306PBF
- Infineon HEXFET N-Channel MOSFET 200 V, 3-Pin DPAK IRFR4620PBF
- Infineon HEXFET N-Channel MOSFET 30 V, 3-Pin DPAK IRFR3707ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN