Références fabricant

Infineon HEXFET N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZTRPBF

N° de stock RS:: 165-5834
Référence fabricant:: IRFR3707ZTRPBF
Fabricant:: Infineon

Infineon HEXFET N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZTRPBF

Sous-total (1 bobine de 2000 unités)*

502,00 €

(TVA exclue)

608,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles

Unité	Prix par unité	la bobine*
2000 +	0,251 €	502,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-5834
Référence fabricant:: IRFR3707ZTRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	56 A
	Maximum Drain Source Voltage	30 V
	Package Type	DPAK (TO-252)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	12.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.25V
	Minimum Gate Threshold Voltage	1.35V
	Maximum Power Dissipation	50 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	6.22mm
	Typical Gate Charge @ Vgs	9.6 nC @ 4.5 V
	Number of Elements per Chip	1
	Length	6.73mm
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	2.39mm

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Maximum Continuous Drain Current 56 A
	Maximum Drain Source Voltage 30 V
	Package Type DPAK (TO-252)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 12.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.25V
	Minimum Gate Threshold Voltage 1.35V
	Maximum Power Dissipation 50 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 6.22mm
	Typical Gate Charge @ Vgs 9.6 nC @ 4.5 V
	Number of Elements per Chip 1
	Length 6.73mm
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 2.39mm

Pays d'origine :: CN

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon HEXFET N-Channel MOSFET, 56 A, 30 V, 3-Pin DPAK IRFR3707ZTRPBF

N-Channel Power MOSFET 30V, Infineon

Liens connexes