Infineon HEXFET Type N-Channel MOSFET, 43 A, 60 V Enhancement, 3-Pin TO-263 IRFS3806TRLPBF

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8,47 €

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10,25 €

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Prix par unité
le paquet*
10 - 400,847 €8,47 €
50 - 900,805 €8,05 €
100 - 2400,77 €7,70 €
250 - 4900,737 €7,37 €
500 +0,465 €4,65 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
827-4101
Référence fabricant:
IRFS3806TRLPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

43A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

15.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

71W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Width

9.65 mm

Height

4.83mm

Automotive Standard

No

Pays d'origine :
CN

Infineon HEXFET Series MOSFET, 43A Maximum Continuous Drain Current, 71W Maximum Power Dissipation - IRFS3806TRLPBF


This MOSFET is crafted for optimal performance in high-efficiency applications. Its enhancement mode configuration is pivotal in power management, driving significant usage across diverse electronic systems. It supports efficient switching and signal amplification, essential for sectors such as automation, electronics, and the electrical and mechanical industries.

Features & Benefits


• High continuous drain current capability of up to 43A

• Efficient operation with a maximum drain-source voltage of 60V

• Low on-resistance reduces power loss

• High-temperature application suitability with a range up to +175°C

• Space-saving surface mount design

• Enhanced ruggedness against dynamic stress for consistent performance

Applications


• Ideal for high-speed power switching scenarios

• Used in uninterruptible power supply systems

• Applicable in synchronous rectification within switched-mode power supplies

• Suitable for hard-switched and high-frequency circuits

What is the maximum gate-to-source voltage?


The maximum gate-to-source voltage for this component is -20V to +20V, allowing flexibility in various circuit designs.

How does the on-resistance affect power dissipation?


Lower on-resistance minimises power dissipation during operation, leading to enhanced efficiency and thermal performance.

What is the typical gate charge required?


The typical gate charge at a gate-source voltage of 10V is 22nC, enabling quick switching transitions.

Is it compatible with surface mount PCB designs?


Yes, the surface mount design is suitable for modern PCB layouts, facilitating integration into Compact electronic devices.

What factors should be considered when using the MOSFET in high-temperature applications?


When operating at high temperatures, ensure adequate thermal management is implemented to respect the maximum operating temperature limit of +175°C for reliability.

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