Infineon HEXFET Type P-Channel MOSFET, 6.6 A, 100 V Enhancement, 3-Pin TO-252 IRFR9120NTRPBF
- N° de stock RS:
- 827-4082
- Numéro d'article Distrelec:
- 304-44-467
- Référence fabricant:
- IRFR9120NTRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
18,92 €
(TVA exclue)
22,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 20 unité(s) expédiée(s) à partir du 31 août 2026
- Plus 20 unité(s) expédiée(s) à partir du 31 août 2026
- Plus 380 unité(s) expédiée(s) à partir du 07 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,946 € | 18,92 € |
| 100 - 180 | 0,738 € | 14,76 € |
| 200 - 480 | 0,69 € | 13,80 € |
| 500 - 980 | 0,643 € | 12,86 € |
| 1000 + | 0,596 € | 11,92 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-4082
- Numéro d'article Distrelec:
- 304-44-467
- Référence fabricant:
- IRFR9120NTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 480mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 40W | |
| Forward Voltage Vf | -1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 480mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 40W | ||
Forward Voltage Vf -1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 150°C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Height 2.39mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 6.6A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - IRFR9120NTRPBF
This MOSFET plays a vital role in contemporary electronic circuits, especially in applications that require efficient current management. It is characterised by its ability to deliver high performance and low on-resistance, making it suitable for a wide range of electrical and electronic systems. This device is tailored to meet the requirements of sectors such as automation, electrical engineering, and other areas dependent on power management solutions.
Features & Benefits
• High continuous drain current rating of 6.6A supports effective operation
• Capable of managing voltages up to 100V for demanding applications
• Designed in DPAK TO-252 package for precise surface mounting
• Low maximum drain-source resistance of 480mΩ improves power efficiency
• Provides a gate threshold voltage range of 2V to 4V for dependable control
• Supports enhancement mode operation to enhance switching performance
Applications
• Utilised for power management in automation systems
• Employed in DC-DC converter designs
• Suitable for high current switching in industrial equipment
• Integrated into power supply circuits for efficient performance
• Applicable in inverter circuits and motor control
What is the optimal operating temperature for this product?
The optimal operating temperature ranges from -55°C to +150°C, allowing efficient performance in various environments.
How can the gate threshold voltage influence performance?
The maximum gate threshold voltage impacts switching behaviour; the defined range of 2V to 4V ensures reliable on/off conditions.
Is there a specific method for mounting this device?
It is designed for surface mount applications, particularly within the DPAK TO-252 footprint, facilitating integration into PCB layouts.
What does the low RDS(on) mean for my circuit?
A low RDS(on) helps minimise power loss during operation, enhancing overall system efficiency and reducing heat generation.
Can this product handle reverse current?
Yes, it possesses characteristics suitable for effectively managing reverse currents, ensuring stability in various applications.
Liens connexes
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