Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247 IRFP250MPBF
- N° de stock RS:
- 827-4004
- Numéro d'article Distrelec:
- 304-36-390
- Référence fabricant:
- IRFP250MPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
14,58 €
(TVA exclue)
17,64 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 185 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 2,916 € | 14,58 € |
| 25 - 45 | 2,508 € | 12,54 € |
| 50 - 120 | 2,336 € | 11,68 € |
| 125 - 245 | 2,16 € | 10,80 € |
| 250 + | 1,312 € | 6,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-4004
- Numéro d'article Distrelec:
- 304-36-390
- Référence fabricant:
- IRFP250MPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2mm | |
| Standards/Approvals | No | |
| Length | 16.13mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Operating Temperature 175°C | ||
Width 5.2mm | ||
Standards/Approvals No | ||
Length 16.13mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250MPBF
This N-channel MOSFET is designed for high performance and efficiency across a variety of applications. It offers a maximum continuous drain current of 30A and a drain-source voltage rating of 200V, making it suitable for tasks in the automation and electronics sectors. Its design ensures effective thermal performance, which enhances its use in electrical and mechanical industries.
Features & Benefits
• Dynamic dv/dt rating ensures stability during operation
• Enhanced thermal capabilities, with an operating temperature of up to 175°C
• Low on-resistance reduces power losses
• Fully avalanche-rated, providing over-voltage protection
• Simple drive requirements for easier integration into designs
Applications
• Suitable for high-frequency switching
• Ideal for power supplies and converters
• Applicable in motor control systems and industrial drives
• Utilised in renewable energy systems, such as solar inverters
How is thermal performance managed in demanding environments?
The thermal resistance characteristics are designed for efficient heat dissipation, allowing operation from -55°C to +175°C.
What are the implications of the low Rds(on)?
The low on-resistance results in lower power dissipation during conduction, enhancing overall system efficiency and reducing thermal stress on components.
Can this device be used for parallel configurations?
Yes, the design facilitates paralleling, increasing current capacity and improving thermal performance in high-power applications.
What should be considered when selecting the gate drive voltage?
A gate drive voltage between 2V and 4V is optimal for ensuring sufficient switching performance and preventing undesired operation.
What measures are in place for over-voltage protection?
The MOSFET is fully avalanche-rated, safeguarding against transient over-voltages and ensuring reliable operation in fluctuating conditions.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP250NPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247