Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247 IRFP250MPBF

N° de stock RS:: 827-4004
Référence fabricant:: IRFP250MPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247 IRFP250MPBF

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

11,23 €

(TVA exclue)

13,59 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Stock limité

Plus 255 unité(s) expédiée(s) à partir du 05 janvier 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le paquet*
5 - 20	2,246 €	11,23 €
25 - 45	1,93 €	9,65 €
50 - 120	1,796 €	8,98 €
125 - 245	1,662 €	8,31 €
250 +	1,012 €	5,06 €

*Prix donné à titre indicatif

N° de stock RS:: 827-4004
Référence fabricant:: IRFP250MPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	75mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	123nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	214W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Width	5.2 mm
	Length	16.13mm
	Standards/Approvals	No
	Height	21.1mm
	Distrelec Product Id	304-36-390
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 75mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 123nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 214W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Width 5.2 mm
	Length 16.13mm
	Standards/Approvals No
	Height 21.1mm
	Distrelec Product Id 304-36-390
	Automotive Standard No

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250MPBF

This N-channel MOSFET is designed for high performance and efficiency across a variety of applications. It offers a maximum continuous drain current of 30A and a drain-source voltage rating of 200V, making it suitable for tasks in the automation and electronics sectors. Its design ensures effective thermal performance, which enhances its use in electrical and mechanical industries.

Features & Benefits

• Dynamic dv/dt rating ensures stability during operation

• Enhanced thermal capabilities, with an operating temperature of up to 175°C

• Low on-resistance reduces power losses

• Fully avalanche-rated, providing over-voltage protection

• Simple drive requirements for easier integration into designs

Applications

• Suitable for high-frequency switching

• Ideal for power supplies and converters

• Applicable in motor control systems and industrial drives

• Utilised in renewable energy systems, such as solar inverters

How is thermal performance managed in demanding environments?

The thermal resistance characteristics are designed for efficient heat dissipation, allowing operation from -55°C to +175°C.

What are the implications of the low Rds(on)?

The low on-resistance results in lower power dissipation during conduction, enhancing overall system efficiency and reducing thermal stress on components.

Can this device be used for parallel configurations?

Yes, the design facilitates paralleling, increasing current capacity and improving thermal performance in high-power applications.

What should be considered when selecting the gate drive voltage?

A gate drive voltage between 2V and 4V is optimal for ensuring sufficient switching performance and preventing undesired operation.

What measures are in place for over-voltage protection?

The MOSFET is fully avalanche-rated, safeguarding against transient over-voltages and ensuring reliable operation in fluctuating conditions.