Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247 IRFP250NPBF
- N° de stock RS:
- 541-0042
- Référence fabricant:
- IRFP250NPBF
- Fabricant:
- Infineon
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4,45 €
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5,38 €
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 4,45 € |
| 10 - 24 | 4,22 € |
| 25 + | 4,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-0042
- Référence fabricant:
- IRFP250NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 75mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 214W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.3mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Width | 5.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 75mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 214W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 20.3mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Width 5.3mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250NPBF
This power MOSFET is engineered for high performance across various electronic applications. As an N-channel MOSFET, it efficiently enhances current flow when voltage is applied. It is notable for its capacity to manage high current levels while maintaining low on-resistance, which makes it suitable for power-intensive applications.
Features & Benefits
• Continuous drain current rating of 30A supports robust performance
• Power dissipation capacity of 214W accommodates heavy-duty applications
• Maximum drain-source voltage of 200V contributes to device reliability
• Low Rds(on) of 75 mΩ minimises energy loss during operation
• Enhancement mode improves control and efficiency in circuit applications
• Compatible with TO-247AC package for seamless integration into existing systems
Applications
• Power supplies for industrial automation
• Driving high-current loads in electronic circuits
• Converters and inverters in renewable energy systems
• Motor control requiring fast switching
How does this MOSFET handle high temperatures?
With a maximum operating temperature of +175°C, it functions effectively in high-thermal environments, ensuring consistent performance under stress.
What are the implications of the specified on-resistance?
A low Rds(on) of 75 mΩ results in reduced power losses, enhancing overall efficiency and decreasing heat generation during use.
Is this device suitable for pulsed applications?
Yes, it can handle pulsed drain currents up to 120A, making it appropriate for short-duration, high-current applications.
How does it manage gate voltage during operation?
The device accommodates a range of gate-to-source voltages from -20 V to +20 V, providing flexibility in various control circuits.
What is the significance of the avalanche ratings?
The single pulse avalanche energy rating of 315 mJ indicates its capability to endure brief energy surges, safeguarding it under fault conditions.
Liens connexes
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