Références fabricant

Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1

N° de stock RS:: 826-9109
Référence fabricant:: IPD50P04P413ATMA1
Fabricant:: Infineon

Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1

Offre groupée disponible

Sous-total (1 paquet de 25 unités)*

24,45 €

(TVA exclue)

29,575 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Dernier stock RS

14 725 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	le paquet*
25 - 25	0,978 €	24,45 €
50 - 100	0,763 €	19,08 €
125 - 225	0,714 €	17,85 €
250 - 600	0,664 €	16,60 €
625 +	0,616 €	15,40 €

*Prix donné à titre indicatif

N° de stock RS:: 826-9109
Référence fabricant:: IPD50P04P413ATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	Power Transistor
	Channel Type	Type P
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-252
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	12.6mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	58W
	Typical Gate Charge Qg @ Vgs	39nC
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Length	6.5mm
	Standards/Approvals	RoHS
	Height	2.3mm
	Automotive Standard	AEC-Q

	Sélectionner tout
	Marque Infineon
	Product Type Power Transistor
	Channel Type Type P
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-252
	Series OptiMOS P
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 12.6mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 58W
	Typical Gate Charge Qg @ Vgs 39nC
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Length 6.5mm
	Standards/Approvals RoHS
	Height 2.3mm
	Automotive Standard AEC-Q

Statut RoHS non applicable

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252 IPD50P04P413ATMA1

Frais de livraison offerts pour toute commande de plus de 75,00 €

Infineon OptiMOS™P P-Channel Power MOSFETs

MOSFET Transistors, Infineon

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