Infineon OptiMOS P Type P-Channel Power Transistor, 50 A, 40 V Enhancement, 3-Pin TO-252

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Sous-total (1 bobine de 2500 unités)*

740,00 €

(TVA exclue)

895,00 €

(TVA incluse)

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Dernier stock RS
  • 12 500 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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la bobine*
2500 +0,296 €740,00 €

*Prix donné à titre indicatif

N° de stock RS:
165-5949
Référence fabricant:
IPD50P04P413ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

Power Transistor

Channel Type

Type P

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS P

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

39nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

58W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

6.5mm

Width

6.22 mm

Height

2.3mm

Automotive Standard

AEC-Q

Statut RoHS non applicable

Pays d'origine :
CN

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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