Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2
- N° de stock RS:
- 220-7416
- Référence fabricant:
- IPD90P03P4L04ATMA2
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
11,16 €
(TVA exclue)
13,505 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,232 € | 11,16 € |
| 50 - 120 | 1,988 € | 9,94 € |
| 125 - 245 | 1,852 € | 9,26 € |
| 250 - 495 | 1,74 € | 8,70 € |
| 500 + | 1,608 € | 8,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7416
- Référence fabricant:
- IPD90P03P4L04ATMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 125nC | |
| Maximum Power Dissipation Pd | 137W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 125nC | ||
Maximum Power Dissipation Pd 137W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon offers a wide portfolio of P-channel automotive power MOSFET in DPAK, D2PAK, TO220, TO262 and SO8 package with the technology of OptiMOS -P2 and Gen5.
P-channel - Logic Level - Enhancement mode
No charge pump required for high side drive.
Simple interface drive circuit
World's lowest RDSon at 40V
Highest current capability
Lowest switching and conduction power losses for highest thermal efficiency
Liens connexes
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