Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1

N° de stock RS:: 825-9051
Référence fabricant:: IPD042P03L3GATMA1
Fabricant:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1

Sous-total (1 paquet de 10 unités)*

13,80 €

(TVA exclue)

16,70 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

50 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Plus 1 790 unité(s) expédiée(s) à partir du 14 août 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le paquet*
10 +	1,38 €	13,80 €

*Prix donné à titre indicatif

N° de stock RS:: 825-9051
Référence fabricant:: IPD042P03L3GATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS P
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6.8mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	150W
	Forward Voltage Vf	-1.1V
	Typical Gate Charge Qg @ Vgs	131nC
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS P
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6.8mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 150W
	Forward Voltage Vf -1.1V
	Typical Gate Charge Qg @ Vgs 131nC
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Automotive Standard No

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 70A Maximum Continuous Drain Current - IPD042P03L3GATMA1

This MOSFET is a P-channel enhancement-mode power transistor designed for surface-mount applications where high current handling and a robust thermal operating range are required. It functions as a high-performance switching device in power-conversion and load-control circuits, providing low conduction loss and controlled gate-drive behaviour for demanding electronic systems.

Features and Benefits:

• 6.8 mΩ RDS(on) minimises conduction losses for improved efficiency
• 70A continuous drain current supports heavy load switching
• 150W power dissipation enables sustained thermal handling
• 131 nC typical gate charge allows predictable switching behaviour
• -55 °C to 175 °C operating range permits high-temperature deployments
• VGS ±20V rating ensures gate-drive voltage flexibility

Applications

• Suitable for synchronous rectification in DC-DC converters
• Ideal for high-current load switching in power supplies
• Used with motor drivers requiring low conduction resistance
• Can be used for battery management and protection circuits
• Appropriate for high-density surface-mount power modules

What package type should I anticipate for PCB layout considerations?

The device is supplied in a TO-252 surface-mount package with three pins, enabling compact board placement and thermal-pad routing.

How does the device handle gate-drive voltages during operation?

The maximum gate-source voltage is ±20V, so gate drivers should be specified within this limit to avoid overstress.

What is the maximum voltage this transistor can block?

It is rated for a maximum drain-source voltage of 30V, defining its suitability for low-voltage power systems.

Are there any limitations on forward voltage during conduction?

The typical forward voltage is -1.1V, which affects conduction-loss calculations in circuit design.