Infineon OptiMOS P Type P-Channel MOSFET, 70 A, 30 V Enhancement, 3-Pin TO-252 IPD042P03L3GATMA1
- N° de stock RS:
- 825-9051
- Référence fabricant:
- IPD042P03L3GATMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
14,28 €
(TVA exclue)
17,28 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 50 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 790 unité(s) expédiée(s) à partir du 11 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 1,428 € | 14,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 825-9051
- Référence fabricant:
- IPD042P03L3GATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS P | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 131nC | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.41mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS P | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 131nC | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 2.41mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type P-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type P-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-252 IPD70P04P4L08ATMA2
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-252 IPD70N12S311ATMA1
- Infineon OptiMOS P Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD90P04P4L04ATMA1
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-70