onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 3-Pin TO-252 FDD6685

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6,19 €

(TVA exclue)

7,49 €

(TVA incluse)

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Prix par unité
le paquet*
10 +0,619 €6,19 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
809-0916
Numéro d'article Distrelec:
304-45-652
Référence fabricant:
FDD6685
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-252

Series

PowerTrench

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17nC

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

52W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Height

2.39mm

Width

6.22 mm

Automotive Standard

AEC-Q101

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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