onsemi PowerTrench Type P-Channel MOSFET, 55 A, 35 V Enhancement, 3-Pin TO-252 FDD6637
- N° de stock RS:
- 759-9093
- Référence fabricant:
- FDD6637
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
5,98 €
(TVA exclue)
7,235 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
- 3 165 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,196 € | 5,98 € |
| 50 - 95 | 1,03 € | 5,15 € |
| 100 - 495 | 0,894 € | 4,47 € |
| 500 - 995 | 0,786 € | 3,93 € |
| 1000 + | 0,716 € | 3,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 759-9093
- Référence fabricant:
- FDD6637
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 35V | |
| Series | PowerTrench | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 19mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | -0.8V | |
| Maximum Power Dissipation Pd | 57W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 35V | ||
Series PowerTrench | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 19mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf -0.8V | ||
Maximum Power Dissipation Pd 57W | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
Automotive P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor is providing solutions that solve complex challenges in the automotive market With a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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