onsemi Isolated 2 Type N, Type P-Channel MOSFET, 880 mA, 30 V Enhancement, 6-Pin SC-88 NTJD4158CT1G
- N° de stock RS:
- 780-0614
- Référence fabricant:
- NTJD4158CT1G
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 ruban de 25 unités)*
6,025 €
(TVA exclue)
7,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 01 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 25 - 75 | 0,241 € | 6,03 € |
| 100 - 225 | 0,208 € | 5,20 € |
| 250 - 475 | 0,18 € | 4,50 € |
| 500 - 975 | 0,158 € | 3,95 € |
| 1000 + | 0,144 € | 3,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 780-0614
- Référence fabricant:
- NTJD4158CT1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 880mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.65V | |
| Maximum Power Dissipation Pd | 270mW | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 880mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.65V | ||
Maximum Power Dissipation Pd 270mW | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
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