onsemi Isolated 2 Type N, Type P-Channel Power MOSFET, 3.9 A, 30 V Enhancement, 8-Pin SOIC SI4532DY
- N° de stock RS:
- 772-8938
- Référence fabricant:
- SI4532DY
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
6,58 €
(TVA exclue)
7,96 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 2 420 unité(s) expédiée(s) à partir du 13 avril 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,658 € | 6,58 € |
| 100 - 240 | 0,496 € | 4,96 € |
| 250 - 490 | 0,49 € | 4,90 € |
| 500 - 990 | 0,419 € | 4,19 € |
| 1000 + | 0,342 € | 3,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 772-8938
- Référence fabricant:
- SI4532DY
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N, Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 2W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N, Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 2W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Length 5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Enhancement Mode Dual MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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