onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET, 6.2 A, 40 V Enhancement, 8-Pin SOIC FDS4897C
- N° de stock RS:
- 671-0539
- Référence fabricant:
- FDS4897C
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
6,61 €
(TVA exclue)
8,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 70 restante(s), prêt à être expédié
- Plus 5 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,322 € | 6,61 € |
| 50 - 95 | 1,14 € | 5,70 € |
| 100 - 495 | 0,988 € | 4,94 € |
| 500 - 995 | 0,868 € | 4,34 € |
| 1000 + | 0,79 € | 3,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0539
- Référence fabricant:
- FDS4897C
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Length | 5mm | |
| Width | 4mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 1.5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Length 5mm | ||
Width 4mm | ||
Standards/Approvals RoHS Compliant | ||
Height 1.5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi Isolated PowerTrench 2 Type N Type P 6.2 A 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P 6.5 A 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P 6.4 A 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P 4.5 A 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type N 8.6 A 8-Pin SOIC
- onsemi Isolated PowerTrench 2 Type P 6.5 A 8-Pin SOIC FDS9934C
- onsemi Isolated PowerTrench 2 Type P 4.5 A 8-Pin SOIC FDS4559
- onsemi Isolated PowerTrench 2 Type P 6.4 A 8-Pin SOIC FDS8958B