onsemi Isolated 2 Type N, Type P-Channel Power MOSFET, 3.9 A, 30 V Enhancement, 8-Pin SOIC

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Sous-total (1 bobine de 2500 unités)*

785,00 €

(TVA exclue)

950,00 €

(TVA incluse)

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  • Expédition à partir du 23 avril 2026
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Unité
Prix par unité
la bobine*
2500 +0,314 €785,00 €

*Prix donné à titre indicatif

N° de stock RS:
166-1620
Référence fabricant:
SI4532DY
Fabricant:
onsemi
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Marque

onsemi

Product Type

Power MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

150°C

Maximum Operating Temperature

-55°C

Transistor Configuration

Isolated

Height

1.5mm

Width

4 mm

Standards/Approvals

No

Length

5mm

Number of Elements per Chip

2

Automotive Standard

No

Enhancement Mode Dual MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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