onsemi Dual N/P-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 FDG6332C

Voir l’ensemble des MOSFETs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
Options de conditionnement :
N° de stock RS:
761-9847
Référence fabricant:
FDG6332C
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

600 mA, 700 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

442 mΩ, 700 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

300 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Transistor Material

Si

Width

1.25mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V

Length

2mm

Number of Elements per Chip

2

Minimum Operating Temperature

-55 °C

Height

1mm

Automotive Dual N-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes