onsemi Isolated PowerTrench 2 Type N-Channel MOSFET, 2.7 A, 20 V Enhancement, 6-Pin SOT-23 FDC6305N
- N° de stock RS:
- 761-3947
- Référence fabricant:
- FDC6305N
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
4,23 €
(TVA exclue)
5,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 10 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 6 880 unité(s) expédiée(s) à partir du 11 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,423 € | 4,23 € |
| 100 - 490 | 0,316 € | 3,16 € |
| 500 - 990 | 0,248 € | 2,48 € |
| 1000 - 2990 | 0,201 € | 2,01 € |
| 3000 + | 0,168 € | 1,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 761-3947
- Référence fabricant:
- FDC6305N
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 128mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Power Dissipation Pd | 960mW | |
| Forward Voltage Vf | 0.77V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 128mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Power Dissipation Pd 960mW | ||
Forward Voltage Vf 0.77V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The FDC6305N is an N-Channel MOSFET featuring a low threshold. Designed with PowerTrench® technology it boasts minimise on-state resistance and low-gate charge for superior switching performance.
Features and Benefits:
• Low gate charge
• Fast switching speed
• PowerTrench® technology
• Super small footprint. 72% smaller than a SO08.
The FDC6305N is typically used in these applications;
• Load switching
• DC/DC Converters
• Motor Driving
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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