onsemi UltraFET Type N-Channel MOSFET, 20 A, 200 V Enhancement, 8-Pin WDFN FDMS2672

Voir l’ensemble des MOSFETs

Sous-total (1 unité)*

0,89 €

(TVA exclue)

1,08 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Dernier stock RS
  • 2 503 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité
Prix par unité
1 +0,89 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
759-9594
Référence fabricant:
FDMS2672
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

200V

Package Type

WDFN

Series

UltraFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

156mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

78W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

30nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5mm

Height

0.75mm

Width

6 mm

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes