onsemi UltraFET Type N-Channel MOSFET, 48 A, 80 V Enhancement, 8-Pin WDFN

Sous-total (1 bobine de 3000 unités)*

3 540,00 €

(TVA exclue)

4 290,00 €

(TVA incluse)

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  • Expédition à partir du 31 juillet 2026
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Unité
Prix par unité
la bobine*
3000 +1,18 €3 540,00 €

*Prix donné à titre indicatif

N° de stock RS:
166-3289
Référence fabricant:
FDMS3572
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

80V

Series

UltraFET

Package Type

WDFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

78W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.75mm

Length

5mm

Width

6 mm

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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