onsemi UltraFET Type N-Channel MOSFET, 10.6 A, 60 V Enhancement, 8-Pin MLP
- N° de stock RS:
- 124-1701
- Référence fabricant:
- FDMS5672
- Fabricant:
- onsemi
Sous-total (1 bobine de 3000 unités)*
5 154,00 €
(TVA exclue)
6 237,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 17 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 + | 1,718 € | 5 154,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-1701
- Référence fabricant:
- FDMS5672
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | UltraFET | |
| Package Type | MLP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Width | 6 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series UltraFET | ||
Package Type MLP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Width 6 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi UltraFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin MLP FDMS5672
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 8-Pin MLP
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 8-Pin MLP FDMC86520L
- onsemi UltraFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- onsemi UltraFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- onsemi UltraFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 RFD12N06RLESM9A
- onsemi UltraFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 HUF76423P3
- onsemi UltraFET N-Channel MOSFET 60 V, 3-Pin DPAK HUFA76429D3ST-F085
