Infineon HEXFET Type P-Channel MOSFET, 6 A, 30 V Enhancement, 7-Pin PQFN IRFHS9301TRPBF

Voir l’ensemble des MOSFETs

Sous-total (1 paquet de 10 unités)*

3,76 €

(TVA exclue)

4,55 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Dernier stock RS
  • 38 190 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité
Prix par unité
le paquet*
10 +0,376 €3,76 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
737-7310
Référence fabricant:
IRFHS9301TRPBF
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.1W

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

13nC

Maximum Operating Temperature

150°C

Length

2.1mm

Width

2.1 mm

Standards/Approvals

No

Height

0.95mm

Automotive Standard

No

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Liens connexes