Infineon HEXFET Type P-Channel MOSFET, 6 A, 30 V Enhancement, 7-Pin PQFN

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Sous-total (1 bobine de 4000 unités)*

832,00 €

(TVA exclue)

1 008,00 €

(TVA incluse)

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Dernier stock RS
  • 36 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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la bobine*
4000 +0,208 €832,00 €

*Prix donné à titre indicatif

N° de stock RS:
165-7468
Référence fabricant:
IRFHS9301TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.1W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

13nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

2.1mm

Width

2.1 mm

Standards/Approvals

No

Height

0.95mm

Automotive Standard

No

Pays d'origine :
TH

P-Channel Power MOSFET 30V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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