Infineon HEXFET Type P-Channel MOSFET, 7.2 A, 20 V Enhancement, 6-Pin PQFN IRLHS2242TRPBF

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Sous-total (1 paquet de 25 unités)*

6,325 €

(TVA exclue)

7,65 €

(TVA incluse)

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  • 26 725 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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25 +0,253 €6,33 €

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N° de stock RS:
130-1018
Référence fabricant:
IRLHS2242TRPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.2A

Maximum Drain Source Voltage Vds

20V

Series

HEXFET

Package Type

PQFN

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

53mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Maximum Power Dissipation Pd

9.6W

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

12nC

Maximum Operating Temperature

150°C

Height

0.95mm

Length

2.1mm

Width

2.1 mm

Standards/Approvals

No

Distrelec Product Id

304-36-993

Automotive Standard

No

Infineon HEXFET Series MOSFET, 7.2A Maximum Continuous Drain Current, 9.6W Maximum Power Dissipation - IRLHS2242TRPBF


This surface mount MOSFET is suitable for applications that demand high-efficiency switching. Its low on-resistance, paired with HEXFET technology, contributes to minimal power loss, making it appropriate for power management tasks within various electronic circuits. With a maximum temperature rating ranging from -55°C to +150°C, it operates effectively in challenging conditions.

Features & Benefits


• Low Rds(on) ensures high efficiency and reduced heat generation

• Capable of handling continuous drain current of 7.2A for robust performance

• Compact 6-pin DFN package facilitates easy integration into limited spaces

• Enhancement mode operation allows for versatile design options

• Provides excellent thermal resistance for improved longevity

Applications


• Used for system/load switching in automation systems

• Ideal for charge and discharge switching in battery management

• Suitable for Compact electronic devices requiring high efficiency

• Employed in electrical control systems and power management circuits

What is the significance of the low Rds(on) feature?


The low Rds(on) feature leads to reduced conduction losses, enhancing overall efficiency and maintaining lower temperatures during operation, which is VITAL for high power applications.

How does this component manage thermal performance?


It has a maximum temperature rating of +150°C, along with low thermal resistance to improve heat dissipation, ensuring stable operation under high-load conditions.

Can it handle varying operational environments?


Yes, it functions effectively across a temperature range of -55°C to +150°C, making it suitable for rigorous applications in diverse climates.

Is it suitable for high-frequency applications?


The MOSFET's design supports high-speed switching, making it effective for high-frequency applications in contemporary electronics.

What are the mounting requirements for optimal performance?


For best outcomes, it should be mounted on a PCB with adequate thermal management features to optimise heat dissipation and electrical connections.

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