Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220 IRF1404ZPBF

N° de stock RS:: 688-6813
Référence fabricant:: IRF1404ZPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 190 A, 40 V Enhancement, 3-Pin TO-220 IRF1404ZPBF

Offre groupée disponible

Sous-total (1 paquet de 2 unités)*

2,52 €

(TVA exclue)

3,04 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

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Plus 54 unité(s) expédiée(s) à partir du 26 janvier 2026
Plus 982 unité(s) expédiée(s) à partir du 02 février 2026

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Unité	Prix par unité	le paquet*
2 - 18	1,26 €	2,52 €
20 - 48	0,995 €	1,99 €
50 - 98	0,93 €	1,86 €
100 - 198	0,87 €	1,74 €
200 +	0,805 €	1,61 €

*Prix donné à titre indicatif

N° de stock RS:: 688-6813
Référence fabricant:: IRF1404ZPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	190A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	220W
	Typical Gate Charge Qg @ Vgs	100nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Standards/Approvals	No
	Length	10.54mm
	Height	8.77mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 190A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 220W
	Typical Gate Charge Qg @ Vgs 100nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Standards/Approvals No
	Length 10.54mm
	Height 8.77mm
	Automotive Standard No

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Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRF1404ZPBF

This MOSFET is a high-performance power component designed for a variety of applications in the automotive and industrial sectors. With a robust continuous drain current of 180A and a maximum drain-source voltage of 40V, it excels in demanding environments. The TO-220AB package type facilitates easy mounting, ensuring efficient integration into electronic circuits and systems.

Features & Benefits

• Utilises HEXFET technology for enhanced efficiency

• Designed for enhancement mode to optimise switching

• Provides fast switching speed to boost overall efficiency

• Capable of repetitive avalanche to enhance reliability

Applications

• Ideal for use in motor control circuits

• Utilised in power supplies and converters

• Designed for use in automotive

• Suited for various industrial automation systems

• Effective in power management and switching

How does the low on-resistance benefit my applications?

The low on-resistance of 2.7mΩ reduces conduction losses, improving overall efficiency in power conversion and energy management systems.

What happens if the device exceeds its maximum operating temperature?

Exceeding the maximum operating temperature of +175°C can lead to performance degradation and potential failure, emphasising the need for adequate thermal management.

Can this be used in parallel configurations?

Yes, when used in parallel configurations, it is Crucial to balance current sharing between devices to avoid overheating and maximise performance.