Infineon HEXFET Type N-Channel MOSFET, 190 A, 100 V Enhancement, 8-Pin TO-263 IRFS4010TRL7PP
- N° de stock RS:
- 130-0998
- Référence fabricant:
- IRFS4010TRL7PP
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
7,86 €
(TVA exclue)
9,52 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- Plus 2 unité(s) expédiée(s) à partir du 26 janvier 2026
- 2 unité(s) finale(s) expédiée(s) à partir du 02 février 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 3,93 € | 7,86 € |
| 20 - 48 | 3,545 € | 7,09 € |
| 50 - 98 | 3,30 € | 6,60 € |
| 100 - 198 | 3,065 € | 6,13 € |
| 200 + | 1,695 € | 3,39 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 130-0998
- Référence fabricant:
- IRFS4010TRL7PP
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 190A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 380W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 190A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 380W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 175°C | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
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