Infineon HEXFETPower MOSFET N-Channel MOSFET, 353 A, 24 V Enhancement, 3-Pin TO-220AB IRF1324PBF
- N° de stock RS:
- 688-6807
- Référence fabricant:
- IRF1324PBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 2 unités)*
2,05 €
(TVA exclue)
2,48 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- Plus 344 unité(s) expédiée(s) à partir du 21 septembre 2026
- 400 unité(s) finale(s) expédiée(s) à partir du 28 septembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 + | 1,025 € | 2,05 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 688-6807
- Référence fabricant:
- IRF1324PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 353A | |
| Maximum Drain Source Voltage Vds | 24V | |
| Package Type | TO-220AB | |
| Series | HEXFETPower MOSFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Width | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 353A | ||
Maximum Drain Source Voltage Vds 24V | ||
Package Type TO-220AB | ||
Series HEXFETPower MOSFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Width 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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