Infineon HEXFETPower MOSFET N-Channel MOSFET, 353 A, 24 V Enhancement, 3-Pin TO-220AB IRF1324PBF
- N° de stock RS:
- 688-6807
- Référence fabricant:
- IRF1324PBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 2 unités)*
6,67 €
(TVA exclue)
8,07 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 + | 3,335 € | 6,67 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 688-6807
- Référence fabricant:
- IRF1324PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 353A | |
| Maximum Drain Source Voltage Vds | 24V | |
| Series | HEXFETPower MOSFET | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.67mm | |
| Width | 4.83mm | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 353A | ||
Maximum Drain Source Voltage Vds 24V | ||
Series HEXFETPower MOSFET | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Length 10.67mm | ||
Width 4.83mm | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 12V to 25V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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