onsemi QFET P-Channel MOSFET, 670 mA, 200 V, 3-Pin SOT-223 FQT3P20TF

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Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
671-1056
Référence fabricant:
FQT3P20TF
Fabricant:
onsemi
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Marque

onsemi

Channel Type

P

Maximum Continuous Drain Current

670 mA

Maximum Drain Source Voltage

200 V

Series

QFET

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.7 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

6 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.5mm

Number of Elements per Chip

1

Transistor Material

Si

Width

3.56mm

Minimum Operating Temperature

-55 °C

Height

1.6mm

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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