Références fabricant

onsemi Single QFET 1 Type P, Type P-Channel MOSFET, 3.4 A, 200 V Enhancement, 3-Pin TO-220F FQPF5P20

N° de stock RS:: 145-4635
Référence fabricant:: FQPF5P20
Fabricant:: onsemi

onsemi Single QFET 1 Type P, Type P-Channel MOSFET, 3.4 A, 200 V Enhancement, 3-Pin TO-220F FQPF5P20

Actuellement indisponible

Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.

N° de stock RS:: 145-4635
Référence fabricant:: FQPF5P20
Fabricant:: onsemi

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Transistor Configuration	Single
	Series	QFET
	Number of Elements per Chip	1
	Channel Type	Type P, Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	3.4 A
	Maximum Drain Source Voltage (Vds)	200 V
	Channel Mode	Enhancement
	Pin Count	3
	Package Type	TO-220F
	Automotive Standard	No
	Forward Voltage (Vf)	5 V
	Height	16.07 mm
	Length	10.36 mm
	Maximum Drain Source Resistance (Rds)	1.4 Ω
	Maximum Gate Source Voltage (Vgs)	-30 V, +30 V
	Maximum Operating Temperature	150 °C
	Maximum Power Dissipation (Pd)	38 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Through Hole, Through Hole
	Standards/Approvals	No
	Typical Gate Charge (Qg) @ Vgs	10 nC
	Width	4.9 mm

	Sélectionner tout
	Marque onsemi
	Transistor Configuration Single
	Series QFET
	Number of Elements per Chip 1
	Channel Type Type P, Type P
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 3.4 A
	Maximum Drain Source Voltage (Vds) 200 V
	Channel Mode Enhancement
	Pin Count 3
	Package Type TO-220F
	Automotive Standard No
	Forward Voltage (Vf) 5 V
	Height 16.07 mm
	Length 10.36 mm
	Maximum Drain Source Resistance (Rds) 1.4 Ω
	Maximum Gate Source Voltage (Vgs) -30 V, +30 V
	Maximum Operating Temperature 150 °C
	Maximum Power Dissipation (Pd) 38 W
	Minimum Operating Temperature -55 °C
	Mount Type Through Hole, Through Hole
	Standards/Approvals No
	Typical Gate Charge (Qg) @ Vgs 10 nC
	Width 4.9 mm

QFET® P-Channel MOSFET, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes

Soyez le/la premier·ère à être informé de nos nouveautés produits et de nos offres spéciales.

adresse e-mail

Les données personnelles que vous nous fournissez en vous inscrivant à cette liste de diffusion seront traitées conformément à notre politique de confidentialité.