onsemi QFET Type P-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 FQD17P06TM

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Sous-total (1 paquet de 5 unités)*

6,10 €

(TVA exclue)

7,40 €

(TVA incluse)

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Unité
Prix par unité
le paquet*
5 - 451,22 €6,10 €
50 - 951,052 €5,26 €
100 - 4950,912 €4,56 €
500 - 9950,802 €4,01 €
1000 +0,73 €3,65 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
671-0968
Référence fabricant:
FQD17P06TM
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

60V

Series

QFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

135mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

21nC

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

-4V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Height

2.39mm

Automotive Standard

No

Distrelec Product Id

304-43-729

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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