onsemi QFET Type P-Channel MOSFET, 9.4 A, 60 V Enhancement, 3-Pin TO-252

Sous-total (1 bobine de 2500 unités)*

1 160,00 €

(TVA exclue)

1 402,50 €

(TVA incluse)

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  • Expédition à partir du 09 mars 2026
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Unité
Prix par unité
la bobine*
2500 +0,464 €1 160,00 €

*Prix donné à titre indicatif

N° de stock RS:
124-1719
Référence fabricant:
FQD11P06TM
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.4A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

QFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

185mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

-4V

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

13nC

Maximum Operating Temperature

150°C

Width

6.1 mm

Length

6.6mm

Standards/Approvals

No

Height

2.3mm

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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