onsemi Single QFET 1 Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-263 FQB4N80TM
- N° de stock RS:
- 671-0908
- Référence fabricant:
- FQB4N80TM
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,28 €
(TVA exclue)
2,76 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En voie de retrait du marché
- 1 041 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,28 € |
| 10 - 99 | 1,96 € |
| 100 - 249 | 1,52 € |
| 250 - 499 | 1,48 € |
| 500 + | 1,27 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0908
- Référence fabricant:
- FQB4N80TM
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-263 | |
| Series | QFET | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.13W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Height | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-263 | ||
Series QFET | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.13W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Height 4.83mm | ||
Number of Elements per Chip 1 | ||
- Pays d'origine :
- MY
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi Single QFET 1 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-263 FQB4N80TM
- onsemi QFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 FQB55N10TM
- onsemi QFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 FQB50N06LTM
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- onsemi QFET Type P-Channel MOSFET 200 V Enhancement, 3-Pin TO-263