onsemi PowerTrench Type N-Channel MOSFET, 8.5 A, 30 V Enhancement, 8-Pin SOIC FDS8884
- N° de stock RS:
- 671-0722
- Référence fabricant:
- FDS8884
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
4,26 €
(TVA exclue)
5,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- Plus 20 unité(s) expédiée(s) à partir du 31 août 2026
- 3 110 unité(s) finale(s) expédiée(s) à partir du 07 septembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,426 € | 4,26 € |
| 100 - 240 | 0,367 € | 3,67 € |
| 250 - 490 | 0,318 € | 3,18 € |
| 500 - 990 | 0,28 € | 2,80 € |
| 1000 + | 0,256 € | 2,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0722
- Référence fabricant:
- FDS8884
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Width | 4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Width 4mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC FDS6680A
- onsemi PowerTrench Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC FDS6690A