onsemi FDN357N Type N-Channel MOSFET, 1.9 A, 30 V Enhancement, 3-Pin SOT-23 FDN357N
- N° de stock RS:
- 671-0441
- Référence fabricant:
- FDN357N
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
2,04 €
(TVA exclue)
2,47 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 20 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 660 unité(s) expédiée(s) à partir du 05 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,408 € | 2,04 € |
| 50 - 95 | 0,352 € | 1,76 € |
| 100 - 495 | 0,304 € | 1,52 € |
| 500 - 995 | 0,268 € | 1,34 € |
| 1000 + | 0,244 € | 1,22 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0441
- Référence fabricant:
- FDN357N
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | FDN357N | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.94mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series FDN357N | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.94mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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