onsemi BSS138 Type N-Channel MOSFET, 220 mA, 50 V Enhancement, 3-Pin SOT-23 BSS138
- RS Stock No.:
- 671-0324
- Mfr. Part No.:
- BSS138
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
1,45 €
(exc. VAT)
1,75 €
(inc. VAT)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
- 800 restante(s), prêt à être expédié
- Plus 2 170 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | 0,145 € | 1,45 € |
| 100 - 240 | 0,125 € | 1,25 € |
| 250 - 490 | 0,108 € | 1,08 € |
| 500 - 990 | 0,095 € | 0,95 € |
| 1000 + | 0,086 € | 0,86 € |
*price indicative
- RS Stock No.:
- 671-0324
- Mfr. Part No.:
- BSS138
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 220mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS138 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Length | 2.92mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Select all | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 220mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS138 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Length 2.92mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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