onsemi BSS138 Type N-Channel MOSFET, 220 mA, 50 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 124-1694
- Référence fabricant:
- BSS138
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 bobine de 3000 unités)*
120,00 €
(TVA exclue)
150,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
- Plus 3 000 unité(s) expédiée(s) à partir du 16 février 2026
- Plus 144 000 unité(s) expédiée(s) à partir du 23 février 2026
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 12000 | 0,04 € | 120,00 € |
| 15000 + | 0,039 € | 117,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 124-1694
- Référence fabricant:
- BSS138
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 220mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | BSS138 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 360mW | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.93mm | |
| Length | 2.92mm | |
| Width | 1.3 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 220mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series BSS138 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 360mW | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.93mm | ||
Length 2.92mm | ||
Width 1.3 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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