Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-262 IRF4905LPBF
- N° de stock RS:
- 650-3662
- Numéro d'article Distrelec:
- 304-29-285
- Référence fabricant:
- IRF4905LPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
20,93 €
(TVA exclue)
25,33 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 5 unité(s) expédiée(s) à partir du 12 octobre 2026
- Plus 45 unité(s) expédiée(s) à partir du 12 octobre 2026
- Plus 250 unité(s) expédiée(s) à partir du 19 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 4,186 € | 20,93 € |
| 25 - 45 | 3,436 € | 17,18 € |
| 50 - 120 | 3,218 € | 16,09 € |
| 125 - 245 | 3,01 € | 15,05 € |
| 250 + | 2,762 € | 13,81 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 650-3662
- Numéro d'article Distrelec:
- 304-29-285
- Référence fabricant:
- IRF4905LPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-262 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.8W | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.54mm | |
| Width | 4.83mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-262 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.8W | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Operating Temperature 175°C | ||
Height 10.54mm | ||
Width 4.83mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, -70A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF4905LPBF
This Infineon MOSFET features a P-channel configuration and is capable of handling -70A of continuous drain current with a maximum drain-source voltage of 55V. It is designed for high-performance applications, particularly in electronic circuits that require effective power management and high efficiency. It is suitable for users in the automation and electronics sectors, offering dependable operation in various environments.
Features & Benefits
• Enhanced performance at high temperatures, up to +175°C
• Low RDS(on) for decreased power losses during operation
• Fast switching capabilities to improve efficiency
• Tolerates repetitive avalanche conditions without failure
• Effective gate charge characteristics for better circuit responsiveness
Applications
• Used in power management circuits for energy-efficient devices
• Ideal for brushless DC motor control
• Applicable in automotive electronics for increased reliability
• Suitable for industrial automation systems that require robust components
What type of voltage can be handled during operation?
It can handle a maximum drain-source voltage of 55V, making it suitable for moderate to high voltage applications.
Can this device operate at elevated temperatures?
Yes, it has an operating temperature range of -55°C to +175°C, allowing it to function in extreme conditions.
How does the low RDS(on) benefit circuit design?
The low RDS(on) reduces conduction losses, resulting in enhanced efficiency and lower heat generation in power applications.
Is this component compatible with typical PCB designs?
Yes, it is designed for through-hole mounting, allowing for seamless integration into standard PCB layouts used in various electronic designs.
What are the gate threshold voltage values for this MOSFET?
The maximum gate threshold voltage is 4V, and the minimum is 2V, ensuring your circuit switches correctly at low voltages.
Liens connexes
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