Vishay IRF9Z14 Type P-Channel Power MOSFET, -6.7 A, -60 V Enhancement, 3-Pin TO-220AB IRF9Z14PBF
- N° de stock RS:
- 542-9478
- Référence fabricant:
- IRF9Z14PBF
- Fabricant:
- Vishay
Sous-total (1 unité)*
1,74 €
(TVA exclue)
2,11 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 342 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 340 unité(s) expédiée(s) à partir du 28 septembre 2026
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,74 € |
| 10 - 49 | 1,57 € |
| 50 - 99 | 1,38 € |
| 100 - 249 | 1,30 € |
| 250 + | 1,21 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 542-9478
- Référence fabricant:
- IRF9Z14PBF
- Fabricant:
- Vishay
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | -6.7A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | IRF9Z14 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | -5.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 43W | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id -6.7A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series IRF9Z14 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf -5.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 43W | ||
Maximum Operating Temperature 175°C | ||
Height 9.01mm | ||
Length 10.41mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay IRF9Z14 Series Power MOSFET, 60V Drain Source Voltage, 43W Power Dissipation - IRF9Z14PBF
Features and Benefits:
• Maximum continuous drain current of -6.7A supports substantial load currents
• Maximum power dissipation 43W allows sustained thermal loading
• Typical gate charge 12 nC reduces switching energy and transition losses
• Low RDS(on) 500 mΩ minimises conduction losses at operating conditions
• Tolerant operating range -55 °C to 175 °C for elevated-temperature systems
Applications
• Ideal for discrete high-side switching in power supplies
• Used with through-hole layouts requiring firm heat-sink attachment
• Can be used for motor driver circuits needing a P-channel configuration
• Suitable for replacement in designs needing 60V P-channel devices
What is the package and mounting style for board integration?
How does the gate voltage limit affect control circuitry?
What thermal considerations should I observe during PCB design?
How does channel type and mode influence switching behaviour?
Liens connexes
- Vishay IRF9Z14 Type P-Channel Power MOSFET -60 V Enhancement, 3-Pin TO-220AB IRF9Z14PBF
- onsemi QFET Type P-Channel P-Channel QFET MOSFET 500 V Enhancement, 3-Pin TO-220AB FQP3P50
- ROHM Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB
- ROHM Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB RX3L07BGNC16
- Vishay Type P-Channel MOSFET 60 V TO-220AB SUP90P06-09L-E3
- onsemi PowerTrench Type P-Channel MOSFET 12 V Enhancement, 3-Pin TO-252
- onsemi PowerTrench Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- onsemi PowerTrench Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 FDD4243
