Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-220 IRF530NPBF
- N° de stock RS:
- 541-0755
- Numéro d'article Distrelec:
- 303-41-282
- Référence fabricant:
- IRF530NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
1,38 €
(TVA exclue)
1,67 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 560 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité |
|---|---|
| 1 - 24 | 1,38 € |
| 25 - 49 | 1,16 € |
| 50 - 99 | 1,06 € |
| 100 - 249 | 0,96 € |
| 250 + | 0,91 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-0755
- Numéro d'article Distrelec:
- 303-41-282
- Référence fabricant:
- IRF530NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 70W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.69mm | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 70W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.69mm | ||
Length 10.54mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 17A Maximum Continuous Drain Current, 70W Maximum Power Dissipation - IRF530NPBF
This high power MOSFET is designed for efficient switching applications, offering robust performance across various environments. Its N-channel enhancement mode configuration makes it suitable for numerous electronic and electrical applications where effective current management is crucial. The key specifications position it as an important component in modern automation and control systems.
Features & Benefits
• Low on-resistance of 90mΩ enhances efficiency
• Maximum drain current handling of 17A
• Operating temperature range from -55°C to +175°C
• Fast switching speed reduces energy losses
• Robust design improves reliability under load
• Versatile TO-220AB package facilitates easy integration
Applications
• Power management in industrial automation
• Integration in motor control circuits
• Utilisation in power supply systems for voltage regulation
• Application in high-efficiency converters and inverters
• Suitable for consumer electronics requiring dynamic load support
Is there a specific gate voltage required for optimal operation?
The device operates effectively with a gate-source voltage range of -20V to +20V, ensuring reliable switching functionality.
What is the maximum pulse drain current capability of this device?
The maximum pulsed drain current is rated at 60A, allowing for transient conditions without compromising device integrity.
How do thermal resistance values affect performance?
With a junction-to-case thermal resistance of 2.15°C/W, effective heat dissipation is vital for maintaining performance during high load operation.
What considerations should I have for soldering this component?
The recommended soldering temperature is 300°C for a duration of 10 seconds. It is important to adhere to this guideline to prevent damage.
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
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