Vishay IRF740LC Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740LCPBF
- N° de stock RS:
- 536-5992
- Numéro d'article Distrelec:
- 171-15-850
- Référence fabricant:
- IRF740LCPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
3,61 €
(TVA exclue)
4,37 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 19 unité(s) expédiée(s) à partir du 27 juillet 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 3,61 € |
| 10 - 49 | 3,18 € |
| 50 - 99 | 3,08 € |
| 100 - 249 | 2,88 € |
| 250 + | 2,69 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 536-5992
- Numéro d'article Distrelec:
- 171-15-850
- Référence fabricant:
- IRF740LCPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | IRF740LC | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series IRF740LC | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF740LC Series Power MOSFET, 400V Drain Source Voltage, 10A Continuous Drain Current - IRF740LCPBF
This power MOSFET is a high-voltage switching device designed for industrial and electronic control environments. It operates as an N-channel enhancement-mode transistor capable of handling elevated drain-to-source voltages and moderate continuous currents, making it suitable for power conversion and switch-mode circuits in automation and electrical systems. The device is supplied in a through-hole TO-220AB package for straightforward mounting and thermal interfacing.
Features and Benefits:
• 400V maximum drain voltage delivers high-voltage switching capability • 10A continuous drain current supports moderate load currents • 125W maximum power dissipation enables higher thermal throughput • 550mΩ Rds(on) minimises conduction losses under load • 39nC typical gate charge allows predictable switching energy • ±30V gate tolerance protects gate from excessive drive excursions
Applications
• Suitable for switch-mode power supplies in industrial controllers • Ideal for inverter stages in motor drive units • Used for high-voltage relay and contactor replacement circuits • Can be used for lighting ballast and power factor correction modules • Used with discrete driver stages in prototyping and repair
What temperature range can it operate within?
It functions across a wide thermal span from -55°C up to 150°C, permitting use in harsh ambient conditions and elevated junction scenarios.
How is the component mounted and cooled in typical assemblies?
It uses a through-hole TO-220AB format that allows screw or clip mounting to heatsinks for enhanced thermal dissipation and mechanical stability.
What gate-drive considerations should be observed?
The gate may be driven up to ±30V
designers should limit Peak drive pulses and account for the 39nC gate charge to size driver current and switching transition times.
Are there approvals or restrictions noted for regulatory compliance?
The device meets RoHS requirements, indicating it adheres to restrictions on certain hazardous substances for electronic components.
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