Vishay IRF740 Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740PBF
- N° de stock RS:
- 178-0812
- Référence fabricant:
- IRF740PBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
56,05 €
(TVA exclue)
67,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 650 unité(s) expédiée(s) à partir du 20 juillet 2026
- Plus 1 000 unité(s) expédiée(s) à partir du 25 septembre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,121 € | 56,05 € |
| 100 - 200 | 0,964 € | 48,20 € |
| 250 + | 0,829 € | 41,45 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-0812
- Référence fabricant:
- IRF740PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | IRF740 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series IRF740 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Height 9.01mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay IRF740 Series Power MOSFET, 400V Drain Source Voltage, 10A Continuous Drain Current - IRF740PBF
This power MOSFET is a high-voltage N-channel enhancement device designed for use in industrial switching and power-control circuits. It operates across a wide temperature range and is supplied in a through-hole TO-220AB package suitable for assemblies where robust mounting and straightforward heat-sinking are required. The device is intended for applications demanding sustained current handling and elevated voltage tolerance.
Features and Benefits:
• 400V drain-source rating for high-voltage switching applications • 10A continuous drain current to support moderate power loads • 125W power dissipation for reliable thermal performance • 550mΩ RDS(on) enabling efficient conduction in switching roles • 63nC typical gate charge to inform drive requirements • 20V maximum gate-source voltage for gate-drive margin
Applications
• Suitable for switch-mode power supply primary switching • Ideal for motor-control inverter stages in automation systems • Used for high-voltage power converters in industrial equipment • Can be used for power management in test and measurement rigs
What mounting method does the device require for heat management?
It is a through-hole component in a TO-220AB package, allowing direct attachment to heatsinks using a fastener and insulating hardware if required.
What temperature extremes can it tolerate during operation?
The device is specified to operate down to -55°C and up to 150°C, making it suitable for a wide range of environmental conditions.
What should be considered when designing the gate drive?
The maximum gate-source voltage is 20V and the typical gate charge is 63nC at VGS, so the driver must supply sufficient charge and respect the 20V limit to avoid gate overstress.
Is the device compliant with common environmental material standards?
The component conforms to RoHS directives on restricted hazardous substances.
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