Vishay IRF740A Type N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740APBF
- N° de stock RS:
- 178-0831
- Référence fabricant:
- IRF740APBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
79,20 €
(TVA exclue)
95,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 900 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,584 € | 79,20 € |
| 100 - 200 | 1,362 € | 68,10 € |
| 250 + | 1,267 € | 63,35 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 178-0831
- Référence fabricant:
- IRF740APBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | TO-220AB | |
| Series | IRF740A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type TO-220AB | ||
Series IRF740A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF740A Series Power MOSFET, 400V Maximum Drain Source Voltage, 10A Maximum Continuous Drain Current - IRF740APBF
This power MOSFET is a high-voltage N-channel switching transistor designed for demanding industrial and automation environments. It handles high drain-to-source voltages and suits circuits that require robust switching capability and moderate continuous current capacity while being mounted on a through-hole PCB format.
Features and Benefits:
• 400V rated drain-to-source voltage provides high-voltage switching capability • 10A continuous drain current supports sustained power delivery • 550mΩ low Rds(on) reduces conduction losses during operation • 125W power dissipation enables high-power handling in assemblies • 36nC typical gate charge allows predictable switching behaviour • 150°C maximum operating temperature tolerates elevated thermal conditions
Applications
• Suitable for industrial inverter and converter power stages • Ideal for motor drive switching in automation systems • Used with high-voltage power supplies in test equipment • Can be used for switch-mode power supply primary switches • Suitable for high-voltage relay replacement and protection circuits
What mounting method is required for reliable thermal contact?
It is supplied in a TO-220AB through-hole package that enables secure heatsink attachment via the rear mounting tab for effective heat removal.
How tolerant is the gate to control voltage excursions?
The gate accepts up to 30V between gate and source, allowing standard gate drive voltages while protecting against overvoltage.
What ambient temperature range can it operate in?
It functions across a wide temperature span from -55°C up to its maximum 150°C junction limit for elevated-temperature applications.
How does the device behave during hard switching events?
The specified gate charge of 36nC and the device capacitances define switching losses and timing, which helps in calculating drive requirements for hard-switching topologies.
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