Vishay IRFZ48R Type N-Channel Power MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- N° de stock RS:
- 281-6035
- Numéro d'article Distrelec:
- 171-17-666
- Référence fabricant:
- IRFZ48RPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 1000 unités)*
1 308,00 €
(TVA exclue)
1 583,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 1000 - 1000 | 1,308 € | 1 308,00 € |
| 2000 - 4000 | 1,21 € | 1 210,00 € |
| 5000 + | 1,125 € | 1 125,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 281-6035
- Numéro d'article Distrelec:
- 171-17-666
- Référence fabricant:
- IRFZ48RPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IRFZ48R | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IRFZ48R | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay IRFZ48R Series Power MOSFET, 60V Drain Source Voltage, 50A Continuous Drain Current - IRFZ48RPBF
This power MOSFET is a through‑hole N‑channel enhancement device designed for switching and amplification tasks in industrial electronic systems. It operates within moderate voltage ranges and is suited to applications requiring robust thermal tolerance and substantial current handling in a TO‑220AB package.
Features and Benefits:
• 60V maximum drain‑source voltage for mid‑voltage circuits • 50A continuous drain current for heavy‑load switching • 0.018Ω Rds(on) reduces conduction losses • 190W power dissipation for sustained power handling • 110nC typical gate charge for predictable switching behaviour • 175°C maximum junction temperature for high‑temperature environments
Applications
• Suitable for motor drive stages in automation systems • Ideal for power supply switch elements in industrial equipment • Used for load switching in electrical distribution modules • Can be used for high‑current switching in mechanical control systems
What gate drive considerations are required for fast switching?
Use a driver capable of delivering sufficient Peak current to charge 110nC quickly, and observe the 20V maximum gate‑source rating to avoid overdrive.
How does thermal management affect continuous operation?
Mount on an appropriate heatsink and consider the 190W dissipation limit and 175°C maximum operating temperature when calculating thermal resistance and duty cycles.
What factors determine suitability for PCB versus chassis mounting?
The through‑hole TO‑220AB format suits both PCB mounting and isolated heatsink attachment
choose mounting based on thermal path and mechanical stress needs.
Can this device tolerate low‑temperature environments during storage and operation?
It is specified to operate down to -55°C, so ensure materials and solder processes are compatible with that lower bound.
Liens connexes
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