Vishay IRFZ48R Type N-Channel Power MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- N° de stock RS:
- 281-6035
- Numéro d'article Distrelec:
- 171-17-666
- Référence fabricant:
- IRFZ48RPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 1000 unités)*
1 308,00 €
(TVA exclue)
1 583,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 1 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 1000 - 1000 | 1,308 € | 1 308,00 € |
| 2000 - 4000 | 1,21 € | 1 210,00 € |
| 5000 + | 1,125 € | 1 125,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 281-6035
- Numéro d'article Distrelec:
- 171-17-666
- Référence fabricant:
- IRFZ48RPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IRFZ48R | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 190W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IRFZ48R | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 190W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay IRFZ48R Series Power MOSFET, 60V Maximum Drain Source Voltage, 50A Maximum Continuous Drain Current - IRFZ48RPBF
This power MOSFET is a through-hole N-channel transistor intended for switching and power-management roles in industrial and commercial electronics. Designed to operate across a wide temperature range, it suits demanding environments where high current handling and robust thermal performance are required. The device incorporates enhancement-mode channel control for efficient conduction in power circuits.
Features and Benefits:
• Low on-resistance 0.018Ω reduces conduction losses
• High continuous drain current 50A supports heavy loads
• Maximum power dissipation 190W enables high-power operation
• Maximum drain-source voltage 60V allows medium-voltage systems
• Typical gate charge 110nC facilitates predictable switching behaviour
• Gate-source rating 20V offers standard gate-drive compatibility
• High continuous drain current 50A supports heavy loads
• Maximum power dissipation 190W enables high-power operation
• Maximum drain-source voltage 60V allows medium-voltage systems
• Typical gate charge 110nC facilitates predictable switching behaviour
• Gate-source rating 20V offers standard gate-drive compatibility
Applications
• Used for motor-drive stages in industrial controllers
• Suitable for DC-DC converters and power supplies
• Ideal for switch-mode power amplification circuits
• Can be used for battery management and protection systems
• Used with heat-sink assemblies in high-power modules
• Suitable for DC-DC converters and power supplies
• Ideal for switch-mode power amplification circuits
• Can be used for battery management and protection systems
• Used with heat-sink assemblies in high-power modules
What mounting method does it require for assembly?
It is supplied in a TO-220AB package configured for through-hole mounting and common heatsink attachment.
How does it perform in extreme ambient temperatures?
The device is specified to operate from -55°C up to 175°C, allowing use in harsh thermal conditions without derating of basic functionality.
What gate-drive considerations are recommended?
The maximum gate-source voltage is 20V
designers should limit drive amplitude accordingly and account for the 110nC typical gate charge when sizing gate drivers.
How should thermal management be approached in high-power designs?
With a 190W maximum power dissipation rating, implement adequate heatsinking and thermal interface materials and consider PCB thermal vias to maintain junction temperatures within limits.
Liens connexes
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